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d a t a sh eet product data sheet supersedes data of 2004 jun 11 2004 nov 08 discrete semiconductors PBSS4520X 20 v, 5 a npn low v cesat (biss) transistor bo ok, halfpage m3d109
2004 nov 08 2 nxp semiconductors product data sheet 20 v, 5 a npn low v cesat (biss) transistor PBSS4520X features ? high h fe and low v cesat at high current operation ? high collector curre nt capability: i c maximum 5 a ? higher efficiency leading to less heat generation. applications ? medium power peripheral drivers, e.g. fans and motors ? strobe flash units for dsc and mobile phones ? inverter applicatio ns, e.g. tft displays ? power switch for lan and adsl systems ? medium power dc-to-dc conversion ? battery chargers. description npn low v cesat biss transistor in a sot89 (sc-62) plastic package. pnp complement: pbss5520x. marking note 1. * = p: made in hong kong * = t: made in malaysia * = w: made in china. type number marking code (1) PBSS4520X *1f pinning pin description 1 emitter 2 collector 3 base 321 sym04 2 1 2 3 fig.1 simplified outline (sot89) and symbol. quick reference data symbol parameter max. unit v ceo collector-emitter voltage 20 v i c collector current (dc) 5 a i cm peak collector current 10 a r cesat equivalent on-resistance 44 m ordering information type number package name description version PBSS4520X sc-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads sot89
2004 nov 08 3 nxp semico nductors product data sheet 20 v, 5 a npn low v cesat (biss) transistor PBSS4520X limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. operated under pulsed conditions: pulse width t p 10 ms; duty cycle 0.2. 2. device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm 2 . 4. device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm 2 . 5. device mounted on a 7 cm 2 ceramic printed-circuit board, 1 cm 2 single-sided copper and tin-plated. for other mounting conditions, see ?thermal considerations for sot89 in the general part of associated handbook? . symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter ? 20 v v ceo collector-emitter voltage open base ? 20 v v ebo emitter-base voltage open collector ? 5 v i c collector current (dc) ? 5 a i crm repetitive peak collector current notes 1 and 2 ? 7 a i cm peak collector current t p 1 ms ? 10 a i b base current (dc) ? 1 a i bm peak base current t p 1 ms ? 2 a p tot total power dissipation t amb 25 c notes 1 and 2 ? 2.5 w note 2 ? 0.55 w note 3 ? 1 w note 4 ? 1.4 w note 5 ? 1.6 w t stg storage temperature ? 65 +150 c t j junction temperature ? 150 c t amb ambient temperature ? 65 +150 c
2004 nov 08 4 nxp semico nductors product data sheet 20 v, 5 a npn low v cesat (biss) transistor PBSS4520X t amb ( c) ? 50 200 150 50 100 0 001aaa229 800 400 1200 1600 p tot (mw) 0 (1) (2) (3) fig.2 power derating curves. (1) fr4 pcb; 6 cm 2 mounting pad for collector. (2) fr4 pcb; 1 cm 2 mounting pad for collector. (3) fr4 pcb; standard footprint.
2004 nov 08 5 nxp semico nductors product data sheet 20 v, 5 a npn low v cesat (biss) transistor PBSS4520X thermal characteristics notes 1. operated under pulsed conditions: pulse width t p 10 ms; duty cycle ? 0.2. 2. device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm 2 . 4. device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm 2 . 5. device mounted on a 7 cm 2 ceramic printed-circuit board, 1 cm 2 single-sided copper and tin-plated. for other mounting conditions, see ?thermal considerations for sot89 in the general part of associated handbook? . symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air notes 1 and 2 50 k/w note 2 225 k/w note 3 125 k/w note 4 90 k/w note 5 80 k/w r th(j-s) thermal resistance from junction to soldering point 16 k/w 006aaa232 10 1 10 2 10 3 z th (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) fig.3 transient thermal impedance as a function of pulse time; typical values. (1) = 1. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) = 0.01. (10) = 0. mounted on fr4 printed-circuit board; standard footprint.
2004 nov 08 6 nxp semico nductors product data sheet 20 v, 5 a npn low v cesat (biss) transistor PBSS4520X 006aaa233 10 1 10 2 10 3 z th (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 (5) (6) (7) (8) (9) (10) (1) (2) (3) (4) fig.4 transient thermal impedance as a function of pulse time; typical values. (1) = 1. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) = 0.01. (10) = 0. mounted on fr4 printed-circuit board; mounting pad for collector 1 cm 2 . 006aaa234 10 1 10 2 10 3 z th (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 (6) (7) (8) (9) (10) (1) (5) (4) (3) (2) fig.5 transient thermal impedance as a function of pulse time; typical values. (1) = 1. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) = 0.01. (10) = 0. mounted on fr4 printed-circuit board; mounting pad for collector 6 cm 2 .
2004 nov 08 7 nxp semico nductors product data sheet 20 v, 5 a npn low v cesat (biss) transistor PBSS4520X characteristics t amb = 25 c unless otherwise specified. note 1. pulse test: t p 300 s; 0.02. symbol parameter conditions min. typ. max. unit i cbo collector-base cut-off current v cb = 20 v; i e = 0 a ? ? 100 na v cb = 20 v; i e = 0 a; t j = 150 c ? ? 50 a i ebo emitter-base cut-off current v eb = 5 v; i c = 0 a ? ? 100 na i ces collector-emitter cut-off current v ce = 20 v; v be = 0 v ? ? 100 na h fe dc current gain v ce = 2 v i c = 0.5 a 300 450 ? i c = 1 a; note 1 300 440 ? i c = 2 a; note 1 250 420 ? i c = 5 a; note 1 200 380 ? v cesat collector-emitte r saturation voltage i c = 0.5 a; i b = 5 ma ? 35 50 mv i c = 1 a; i b = 10 ma ? 50 70 mv i c = 2.5 a; i b = 125 ma; note 1 ? 85 120 mv i c = 4 a; i b = 200 ma; note 1 ? 130 180 mv i c = 5 a; i b = 500 ma; note 1 ? 160 220 mv r cesat equivalent on-resistance i c = 5 a; i b = 500 ma; note 1 ? 32 44 m v besat base-emitter saturation voltage i c = 4 a; i b = 200 ma; note 1 ? 0.9 1.05 v i c = 5 a; i b = 500 ma; note 1 ? 0.96 1.1 v v beon base-emitter turn-on voltage v ce = 2 v; i c = 2 a ? 0.74 0.85 v f t transition frequency i c = 100 ma; v ce = 10 v; f = 100 mhz 100 125 ? mhz c c collector capacitance v cb = 10 v; i e = i e = 0 a; f = 1 mhz ? 90 110 pf
2004 nov 08 8 nxp semico nductors product data sheet 20 v, 5 a npn low v cesat (biss) transistor PBSS4520X 001aaa746 400 600 200 800 1000 h fe 0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (2) (3) fig.6 dc current gain as a function of collector current; typical values. v ce = 2 v. (1) t amb = 100 c. (2) t amb = 25 c. (3) t amb = ? 55 c. 001aaa750 0.4 0.8 1.2 v be (v) 0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 fig.7 base-emitter voltage as a function of collector current; typical values. v ce = 2 v. t amb = 25 c. 001aaa747 10 2 10 10 3 v cesat (mv) 1 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (3) (2) fig.8 collector-emitter saturation voltage as a function of collector current; typical values. i c /i b = 20. (1) t amb = 100 c. (2) t amb = ? 55 c. (3) t amb = 25 c. 001aaa748 i c (ma) 10 ? 1 10 4 10 3 110 2 10 1 10 10 2 10 3 v cesat (mv) 10 ? 1 (1) (2) (3) fig.9 collector-emitter saturation voltage as a function of collector current; typical values. t amb = 25 c. (1) i c /i b = 100. (2) i c /i b = 50. (3) i c /i b = 10.
2004 nov 08 9 nxp semico nductors product data sheet 20 v, 5 a npn low v cesat (biss) transistor PBSS4520X 001aaa749 0.4 0.8 1.2 v besat (v) 0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (1) (2) (3) fig.10 base-emitter saturation voltage as a function of collector current; typical values. i c /i b = 20. (1) t amb = ? 55 c. (2) t amb = 25 c. (3) t amb = 100 c. 001aaa878 0.4 0.8 1.2 v be (v) 0 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (2) (1) (3) fig.11 base-emitter voltage as a function of collector current; typical values. v ce = 2 v. (1) t amb = ? 55 c. (2) t amb = 25 c. (3) t amb = 100 c. v ce (v) 02 1.6 0.8 1.2 0.4 001aaa745 100 150 50 200 250 i c (ma) 0 (10) (9) (1) (2) (3) (4) (5) (6) (8) (7) fig.12 collector current as a function of collector-emitter volt age; typical values. t amb = 25 c. (1) i b = 5 ma. (2) i b = 4.5 ma. (3) i b = 4 ma. (4) i b = 3.5 ma. (5) i b = 3 ma. (6) i b = 2.5 ma. (7) i b = 2 ma. (8) i b = 1.5 ma. (9) i b = 1 ma. (10) i b = 0.5 ma. 001aaa879 i c (ma) 10 ? 1 10 4 10 3 110 2 10 1 10 10 2 r cesat ( ) 10 ? 2 10 ? 1 (1) (3) (2) fig.13 equivalent on-resistance as a function of collector current; typical values. i c /i b = 20. (1) t amb = 100 c. (2) t amb = 25 c. (3) t amb = ? 55 c.
2004 nov 08 10 nxp semico nductors product data sheet 20 v, 5 a npn low v cesat (biss) transistor PBSS4520X reference mount ing conditions 001aaa234 2.5 mm 5 m m 1.6 mm 0.5 mm 1 mm 3.96 mm 3 mm 2.5 mm 1 mm 40 m m 32 mm fig.14 fr4, standard footprint. handbook, halfpage mle322 40 mm 32 mm 2.5 mm 10 mm 5 mm 1.6 mm 0.5 mm 1 mm 3.96 mm 10 mm fig.15 fr4, mounting pad for collector 1 cm 2 . 001aaa235 2.5 mm 5 m m 1.6 mm 0.5 mm 1 mm 3.96 mm 30 mm 20 mm 40 m m 32 mm fig.16 fr4, mounting pad for collector 6 cm 2 .
2004 nov 08 11 nxp semico nductors product data sheet 20 v, 5 a npn low v cesat (biss) transistor PBSS4520X package outline references outline version european projection issue date iec jedec jeita dimensions (mm are the original dimensions) sot89 to-243 sc-62 04-08-03 06-03-16 w m e 1 e e h e b 0 2 4 mm scale b p3 b p2 b p1 c d l p a plastic surface-mounted package; collector pad for good heat transfer; 3 leads sot8 9 123 unit a mm 1.6 1.4 0.48 0.35 c 0.44 0.23 d 4.6 4.4 e 2.6 2.4 h e l p 4.25 3.75 e 3.0 w 0.13 e 1 1.5 1.2 0.8 b p2 b p1 0.53 0.40 b p3 1.8 1.4
2004 nov 08 12 nxp semico nductors product data sheet 20 v, 5 a npn low v cesat (biss) transistor PBSS4520X data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors, including new legal definitions and disclaimers. no changes were made to the technical content, except for package outline drawings which were updated to the latest version. printed in the netherlands r75/03/pp13 date of release: 2004 nov 08 document order number: 9397 750 13884

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